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| SBD T y p e : C20T03QLH OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes - Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Repetitive Peak Surge Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.4g Symbol VRRM VRRSM IO IF(RMS) IFSM Tjw Tstg C20T03QLH 30 35(pulse width 1s duty 1/50) 50 Hz Full Sine Wave 20 Tc=128C Resistive Load 22.2 50Hz Full Sine Wave ,1cycle 180 Non-repetitive -40 to +150 -40 to +150 Unit V V A A A C C Electrical * Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25C, VRM= VRRM per arm Tj= 25C, IFM= 10 A per arm Min. Typ. Max. 1 0.54 1.5 Unit mA V C /W Rth(j-c) Junction to Case C_T_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C20T03QLH/C20T03QLH-11A (per Arm) 50 INSTANTANEOUS FORWARD CURRENT (A) 20 Tj=25C Tj=150C 10 5 2 1 0 0.2 0.4 0.6 0.8 INSTANTANEOUS FORWARD VOLTAGE (V) AVERAGE FORWARD POWER DISSIPATION C20T03QLH/C20T03QLH-11A (Total) RECT 180 SINE WAVE 14 AVERAGE FORWARD POWER DISSIPATION (W) 12 10 8 6 4 2 0 0 4 8 12 16 20 24 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 C 100 C20T03QLH/C20T03QLH-11A (per Arm) PEAK REVERSE CURRENT (mA) 50 20 10 0 5 10 15 20 25 30 35 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C20T03QLH/C20T03QLH-11A (Total) AVERAGE REVERSE POWER DISSIPATION (W) 2.4 RECT 180 2.0 1.6 SINE WAVE 1.2 0.8 0.4 0 0 5 10 15 20 25 30 35 REVERSE VOLTAGE (V) AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE V RM =30 V 24 RECT 180 C20T03QLH/C20T03QLH-11A (Total) AVERAGE FORWARD CURRENT (A) 20 SINE WAVE 16 12 8 4 0 0 25 50 75 100 125 150 CASE TEMPERATURE (C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load C20T03QLH/C20T03QLH-11A 200 SURGE FORWARD CURRENT (A) 160 120 80 40 I FSM 0.02s 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5 C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C20T03QLH/C20T03QLH-11A (per Arm) 2000 JUNCTION CAPACITANCE (pF) 1000 500 200 0.5 1 2 5 10 20 50 REVERSE VOLTAGE (V) |
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